? 2010 ixys all rights reserved 1 - 5 20100629a vmm 1500-0075x2 v dss = 75 v i d25 = 1560 a r ds(on) = 0.38 m dual power mosfet module mosfet t1 + t2 symbol conditions maximum ratings v dss t vj = 25c to 150c 75 v v gs 20 v i d25 i d80 t c = 25c j t c = 80c j 1560 1240 a a i f25 i f80 t c = 25c (diode) j t c = 80c (diode) j 1560 1240 a a phaseleg confguration symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. r dson v gs = 10 v; i d = i d80 ; on chip level 0.38 mw v gs(th) v ds = 20 v; i d = 2.5 ma 2 4 v i dss v ds = v dss ; v gs = 0 v t vj = 25c t vj = 125c 1.5 0.15 ma ma i gss v gs = 20 v; v ds = 0 v 3.0 a c iss c oss c rss v gs = 0 v; v ds = 25 v; f = 1 mhz 115 12.8 1.38 nf nf nf q g q gs q gd v gs = 10 v; v ds = 37 v; i d = 1200 a 1950 580 450 nc nc nc t d(on) t r t d(off) t f e on e off e rec inductive load v gs = 10 v; v ds = 37 v i d = 1200 a; r g = 1.8 t vj = 25c r g = r g ext + r out driver 260 1680 500 880 3 54 0.06 ns ns ns ns mj mj mj t d(on) t r t d(off) t f e on e off e rec inductive load v gs = 10 v; v ds = 37 v i d = 1200 a; r g = 1.8 t vj = 125c r g = r g ext + r out driver 260 1680 520 720 3.5 49 0.08 ns ns ns ns mj mj mj r thjc r thjh with heat transfer paste (ixys test setup) 0.094 0.08 0.13 k/w k/w j additional current limitation by external leads features ? trench mosfets - low r dson - optimized intrinsic reverse diode ? package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - kelvin source terminals for easy drive - isolated dcb ceramic base plate applications ? converters with high power density for - main and auxiliary ac drives of electric vehicles - 4 quadrant dc drives - power supplies with low input voltage, e.g. from fuel cells or solar cells 3 1 power screw terminals 2 8 9 gate control pins 11 10 1 2 3 8 9 10 11
? 2010 ixys all rights reserved 2 - 5 20100629a vmm 1500-0075x2 module symbol conditions maximum ratings i rms per main terminal 500 a t vj t stg -40...+175 -40...+125 c c v isol i isol < 1 ma, 50/60 hz 3600 v~ m d mounting torque terminal connection torque (m6) 2.25 - 2.75 4.5 - 5.5 nm nm characteristic values min. typ. max. r pin to chip * ) 0.06 mw weight 250 g * ) v ds = i d (r ds(on) + r pin to chip ) 30 +1 - 0.5 1.5 0.25 m6x5 din970 2.8 d = 0.8 2.2 23.2 3 79 ? 6.5 8.5 18.50.3 46.50.3 74.50.3 93 110 11 21 34 62 48 optional accessories for modules keyed twin plugs (ul758, style 1385, csa class 5851, guide 460-1-1) ? type zy180l with wire length 350mm - for pins 4 (yellow wire) and 5 (red wire) - for pins 11 (yellow wire) and 10 (red wire) ? type zy180r with wire length 350mm - for pins 7 (yellow wire) and 6 (red wire) - for pins 8 (yellow wire) and 9 (red wire) dimensions in mm (1 mm = 0.0394) source drain diode symbol conditions characteristic values min. typ. max. v sd i f = 1200 a; v gs = 10 v; t vj = 25c t vj = 125c 1.18 0.9 v v t rr q rr i rm v ds = 37 v; i f = 1200 a t vj = 25c di f /dt = 800 a/s 120 2.1 30 ns c a t rr q rr i rm v ds = 50 v; i f = 1000 a t vj = 125c di f /dt = 760 a/s 120 2.8 34 ns c a
? 2010 ixys all rights reserved 3 - 5 20100629a vmm 1500-0075x2 -40 -20 0 20 40 60 80 100 120 140 0.8 0.9 1.0 1.1 1.2 t vj [c] i d [a] v dss normal. 0 1 2 3 4 5 6 0 200 400 600 800 1000 1200 v gs [v] -50 -25 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.2 0.4 0.6 0.8 1.0 0 200 400 600 800 1000 1200 0 1 2 3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 5 v 6 v 7 v 8 v v ds [v] i d [a] i dss = 6 ma t j = 125c t j = 25c v gs = 4 v 10 v 15 v t j = 25c v ds [v] i d [a] 5 v v gs = 4 v 10 v 15 v 6 v 7 v 8 v r ds(on) normal. t vj [c] r ds(on) [m ] t j = 125c r ds(on) normalized r ds(on) i d [a] r ds(on) [m ] t vj = 125c 5 v v ds = 4 v 6 v 7 v 10 v 15 v r ds(on) incl. mounting resistance fig. 1 drain source breakdown voltage v dss versus junction temperature fig. 2 typical transfer characteristics fig. 3 output characteristics at t j = 25c fig. 4 output characteristics at t j = 125c fig. 5 r ds(on) normalized to i d = 1150 a value vs. junction temperature fig. 6 drain source on-state resistance versus i d
? 2010 ixys all rights reserved 4 - 5 20100629a vmm 1500-0075x2 i d [a] 0 200 400 600 800 1000 1200 0 1 2 3 4 0 400 800 1200 1600 t r t d(on) e on e on , e rec [mj] t [ns] 0 2 4 6 8 10 0 2 4 6 8 10 12 0 400 800 1200 1600 2000 2400 t r r g [ ] e on , e rec [mj] t [ns] t d(on) e on 10x e rec(on) 0 2 4 6 8 10 0 20 40 60 80 100 0 500 1000 1500 2000 2500 t f r g [ ] e off [mj] t [ns] t d(off) e off 0 200 400 600 800 1000 1200 0 20 40 60 80 0 200 400 600 800 e off t r t d(off) i d [a] e off [mj] t [ns] q g [nc] 0 400 800 1200 1600 v gs [v] 0 2 4 6 8 10 -40 0 40 80 120 160 200 0 400 800 1200 1600 2000 t c [c] i d [a] 10x e rec(off) v ds = 37 v i g = 10 ma t vj = 25c r g = 1.8 v ds = 37 v v gs = 0/10 v t vj = 125c r g = 1.8 v ds = 37 v v gs = 0/10 v t vj = 125c i d = 1200 a v ds = 37 v v gs = 0/10 v t vj = 125c i d = 1200 a v ds = 37 v v gs = 0/10 v t vj = 125c fig. 7 gate charge characteristics fig. 8 drain current i d versus case temperature t c fig. 9 typ. turn-on energy and switching times versus drain current, inductive switching fig. 12 typ. turn-off energy and switching times versus gate resistor, inductive switching fig. 11 typ. turn-on energy and switching times versus gate resistor, inductive switching fig. 10 typ. turn-off energy and switching times versus drain current, inductive switching
? 2010 ixys all rights reserved 5 - 5 20100629a vmm 1500-0075x2 di f /dt [a/s] 300 400 500 600 700 800 0 1 2 3 4 5 6 di f /dt [a/s] 300 400 500 600 700 800 i rm [a] 0 20 40 60 q rr [c] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 200 400 600 800 1000 1200 v sd [v] i s [a] di f /dt [a/s] 400 500 600 700 800 t rr [ns] 80 100 120 140 160 v r = 37 v i f = 1200 a t vj = 125c t [ms] 1 10 100 1000 10000 r thjh [k/w] 0.00 0.02 0.04 0.06 0.08 0.10 v r = 37 v i d = 1200 a t vj = 125c v r = 37 v i d = 1200 a t vj = 125c fig. 18 typ. transient thermal impedance fig. 13 reverse recovery current i rm of the body diode vs. di/dt fig. 15 reverse recovery time t rr of the body diode vs. di/dt fig. 14 reverse recovery charge q rr of the body diode vs. di/dt fig. 16 source current i s vs. source drain voltage v sd (body diode) fig. 17 defnition of switching times 0 . 9 v g s 0 . 1 v g s 0 . 9 i d 0 . 9 i d 0 . 1 i d v g s v d s i d 0 . 1 i d t t t r t f t d ( on ) t d ( o f f )
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